The FL4953 is the Dual P-Channel logic enhancement mode power field effect transistors
are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management
and other battery powered circuits where high-side switching.
?-30V/-5.2A, RDS(ON) ＜ 60m?@VGS = -10V
?-30V/-4.5A, RDS(ON) ＜90m?@VGS = -4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
Full RoHS compliance
SOP-8 package design